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Studies on the Electrical Characteristics of Single-Heterojunction GaN based HEMTs with AlGaN Nano-Layer of 21 nm

Avrajyoti Dutta, Sanjib Kalita, Subhadeep Mukhopadhyay

Abstract


In this work, we have studied the electrical characteristics of single-heterojunction AlGaN/GaN high electron mobility transistors (HEMTs). The effects of drain voltage and gate voltage on variations of drain current have studied on the basis of simulated HEMT structures. Also, we have studied the effects of aluminium mole fraction, gate length and doping concentration on variations of drain current based on the simulated HEMT structures. This present work will be helpful to fabricate the AlGaN/GaN HEMTs experimentally for applications in sensor technology.

Keywords


drain voltage, gate voltage, mole fraction, gate length, drain current

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References


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