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Effects of Gate Oxide Thickness and Its Dielectric Strength in WS2 Based TMDFET

Prachi Singh, Bramha P. Pandey

Abstract


This paper presents the numerical simulation of transition metal dichalcogenide based field effect transistor (TMDFET). Here we have studied the transfer characteristic, ION/IOFF ratio, subthreshold slope of TMDFET by varying oxide thickness and its dielectric strength dependence performance. The channel material used for field effect transistor is tungsten disulfide (WS2). To calculate the transfer (input) characteristics, we use Non Equilibrium Greens Function (NEGF). Results are achieved by solving the Poisson’s equation. The dielectric strength dependence performance are calculated using different high-k material in place of gate oxide region. To calculate the off state current (IOFF) we have taken VGS =0V at fixed VDS=0.8V, drain current calculation is also done with different values of VGS through varying oxide thickness from 1nm to 3nm. It has been observed that the value of drain current increases by decreasing the thickness of gate oxide region and drain current is also maximum for high-k gate oxide instead of low-k gate oxide materials. Index Terms—High-k, NEGF, WS2, TMDFET

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References


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