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Studies on the Electrical Characteristics of GaN based HEMTs at the AlGaN Nano-Layer Thickness of 9 nm

Avrajyoti Dutta, Sanjib Kalita, Subhadeep Mukhopadhyay

Abstract


In this work, we have designed total 25 individual structures of AlGaN/GaN high electron mobility transistors (HEMTs). Variations in drain current are studied with the change in drain voltage. Also, variations in drain current are studied with the change in gate voltage. Further, variations in drain current are studied with the change in aluminium mole fraction. The amount of drain current is higher in HEMT of lower gate length. This present study may be useful to fabricate the HEMTs experimentally in future.

Keywords


mole fraction, drain current, drain voltage, gate voltage, gate length, nano-layer

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References


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