Dielectric-spectroscopic and a.c. conductivity investigations on manganese doped layered Na1.88Li0.10K0.02Ti3O7 ceramics

Authors

  • Shripal Sharma Associate Professor in Physics P.P.N.College Kanpur-208001 U.P.,India
  • RAKESH SINGH Department of Physics, P.P.N. College, Kanpur-208001, India

Abstract

Some Manganese doped derivatives of Polycrystalline Na1.88Li0.10K0.02Ti3O7 have been prepared by conventional high temperature sintering process and characterized through dielectric-spectroscopic and a.c. conductivity investigations. The dependence of loss tangent (tanδ) and relative permittivity ( ) on temperature (350-775 K) and frequency (10kHz-1MHz) have been reported. The dielectric losses in this material seem to be of three-way contribution; electrical conduction, dipole orientation and space charge polarization. The conductivity plots between log (σacT) versus 1000/T have been divided into four regions namely region I, II, III and IV. The mechanism of conduction in less temperature and highly frequency dependent region I is attributed to electronic hoping conduction. The less frequency dependent and more temperature dependent region II is ascribed to the associated interlayer ionic conduction. While frequency dependent and nearby temperature independent region III may be explained by proposing that the electron hopping and alkali ion hopping interlayer ionic conduction mechanisms are contributing to the transport process. The mechanism of conduction in the least frequency dependent but moderate temperature dependent region IV may be recognized as the unassociated and modified interlayer ionic conduction (in one of the compositions). Keywords: Layered ceramic, solid state reaction, dielectric properties, electrical properties

Author Biographies

  • Shripal Sharma, Associate Professor in Physics P.P.N.College Kanpur-208001 U.P.,India
    Associate Professor in Physics P.P.N.College
  • RAKESH SINGH, Department of Physics, P.P.N. College, Kanpur-208001, India
    Department of Physics, P.P.N. College, Kanpur-208001, India

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Published

2016-09-26

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