Study and Simulation of Radiation Effects on MOS Structures through High Energy Ions
Keywords:
high-energy ion implantation, irradiation, MOS structure, capacitanceAbstract
MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm 2 and 1010 cm 2 were investigated by capacitance measuring methods (C–V, C–t), completed by quasistatic low-frequency C–V and DLTS measurements. The irradiated MOS structures were functional in spite of a high density of radiation defects. The electric activity of the defects brought a sharp decrease in the generation parameters tr and g. The parameters of six deep levels were detected in the MOS structures exposed to 710 MeV Bi ions irradiation. Five of these levels with energies 0.52 eV, 0.14 eV, 0.17 eV, 0.25 eV, 0.27 eV were radiation defectsReferences
SCRIVASTAVA, P.C., PANDEY, S. P., SINHA, O. P., AVASTI, D. K., ASOKAN, K.: Nuclear Inst. and Methods in Physics Research B, 1999, vol. 156, pp. 105–109.
NEUSTROEV, E. P., ANTONOVA, I. V., POPOV, V. P., STAS, V. F., SKURATOV, V. A., DIDYK, A. YU.: Nuclear Instr. and Methods in Physics Research B, 2000, vol. 171, pp. 443–447.
YARYKIN, N., CHO, C. R., ZUHR, R., ROZGONYI, G.: Physica B, 1999, vol. 273–274 pp. 485–488.
ZERBST, M.: Z. Angew. Physics, 1966, vol. 22, pp. 30–36.
PÍSEČNÝ, P., ŤAPAJNA, M., HARMATHA, L., VRBICKÝ, A.: Journal of Electrical Engineering, 2004, vol. 55, pp. 95–99.
LANG, D. V.: J. Appl. Phys., 1974, vol. 45, pp. 3014–3023.
NEUSTROEV, E. P., ANTONOVA, I. V., OBODNIKOV, V. I. POPOV, V. P., SKURATOV, V. A., SMAGULOVA, S. A., DIDYK, A.YU.: Nuclear Instr. and Methods in Physics Research B, 1998, vol. 146, pp. 323–328.
GURNIK, P., HARMATHA, L.: J. Electrical Engineering, 1997, vol. 48. pp. 52–56.
FUKUOKA, N., YONEYAMA, M., HONDA, M., ATOBE, K.: Jpn. J. Appl. Phys., 1993, vol. 32, pp. 2059–2062.
WATKINS, G. D.: The lattice vacancy in silicon. In: Deep Centers in Semiconductors (Si). Edited by S. T. Pantelides, Gordon and Breach Science Publishers, 1986, pp. 147–183
STAŇO, J., ŽIŠKA, M.: Solid State Phenomena, 2002, vol. 82–84, pp. 453–458.
