Theoretical Analysis of GaN/AlGaN Based Quantum Well Structure

Authors

  • Ranjeeta Kumari Madan Mohan Malaviya University Of Technology, Gorakhpur, Uttar Pradesh, India
  • Sneha Sharma
  • Dharmendra Kumar

Keywords:

GaN/AlGaN, Hamiltonian matrix, Schrodinger equation, Wurtzite semiconductor

Abstract

In this paper, we have studied the GaN/AlGaN Based quantum well Structures and describe the numerical code for calculating the band structure of GaN/AlGaN quantum-well wurtzite semiconductors. We have used Luttinger Hamiltonian matrix for calculating wurtzite semiconductors. We have considered Schrodinger wave equation using finite difference method for conduction band calculation and Luttinger Hamiltonian matrix using finite-difference method is used for the calculations of the valence band structures of GaN/AlGaN quantum-well wurtzite.

References

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Published

2019-07-23

Issue

Vol. 5 No. 1 (2019)

Section

Articles